Weebit Nano Ltd (ASX:WBT) has achieved successful endurance results for its ReRAM cells, demonstrating stable voltage and endurance levels compared to production non-volatile memories.
The company’s ReRAM computer memory technology, based on silicon oxide, is being developed as a cheaper, faster and more energy efficient solution than existing flash technology.
Weebit and its partner Leti, the French research institute recognised as a global leader in the field of microelectronics, performed the tests which demonstrated array-level endurance above 100,000 cycles, on par with expectation in the storage memory market, and a significant improvement over flash memories.
In addition, Weebit ensured the SiOx ReRAM layer will be compatible with different tools and technologies used by different production fabs, which is crucial for transferring the Weebit technology to different commercial manufacturers.
Final characterisation will continue over coming weeks on array performance and extended endurance and retention in preparation for the migration to 300mm wafers at 28nm.
READ: Weebit Nano shares ride higher after achieving another memory technology milestone
Weebit chief executive officer Coby Hanoch said: “The baseline technical parameter improvement phase is a significant milestone towards commercialisation.
“The high endurance is well above the capability of Flash and very competitive in the market.
“In addition to technical parameter improvements, we also created a more flexible manufacturing base which will give us much more flexibility in future.
“We used different tools and technologies, used by different production fabs, so we later have the ability to choose which production fab(s) we prefer.
“We believe this progress ensures our ReRAM memories are very attractive for companies using leading-edge designs, including leading artificial intelligence and internet of things applications.”