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4DS Memory achieves key milestone for its new technology

4DS Memory (ASX:4DS) has achieved a key endurance milestone for its interface switching ReRAM memory technology.

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4DS Memory achieves key milestone for its new technology

Endurance – defined as how often the state of a memory cell can be changed without failure – is an important characteristic relevant to the US$40 billion global storage-class memory market.

To be viable for storage-class memory applications, endurance needs to be highly consistent across a statistically significant number of cells and reproducible on different wafers.

4DS has now measured the endurance yield of more than 1,000 cells of five different cell sizes on two different wafers.

Importantly, more than 97% of the memory cells tested achieved the required endurance goal, significantly exceeding the target of 90% endurance yield.

In achieving the milestone, 4DS has demonstrated that it has working memory cells with a significant yield, something that is extremely relevant to memory manufacturers.

4DS has been developing its patented ReRAM, also known as Non-Filamentary ReRAM, with Western Digital Corp (NASDAQ:WDC) since July 2014 under a joint development agreement (JDA).

The JDA was renewed in July 2016 for a further 12 months and is focused on optimising scalability and endurance of ReRAM cells for the mobile and cloud gigabyte silicon storage market.

The company is now closer to proving that it has developed a commercially viable storage class memory technology.

4DS completed a heavily over-subscribed capital raising of $4 million in late October 2016.

Quick facts: 4DS Memory Ltd

Price: 0.044 AUD

ASX:4DS
Market: ASX
Market Cap: $54.58 m
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